Abstract
Consistent with prior qualitative expectations for group IV-VI topological crystalline insulators, this work demonstrates, based on band structure and Chern number calculations, that Pb_1-xSn_xSe/(PbSe)_1-y(EuS)_y quantum wells constitute a promising and viable platform for realizing a variety of quantum anomalous Hall phases. The proposed basis transformation procedure for the multiband k · p Hamiltonian enables the treatment of wells grown along arbitrary crystallographic directions while explicitly accounting for the anisotropy of the material's isoenergetic surfaces. Numerical studies of 111-, 110- and 001-oriented quantum wells predict attainable Chern numbers with magnitudes ranging from 1 to 4, depending on the quantum well width, Sn content, and relative orientation of the four projected L valleys with respect to the growth direction. The results further indicate that appropriate strain compensation is required to achieve high-quality quantization of the Hall conductance.