Abstract
We report the experimental realization of a quantum silicon carbide microscope (QSiCM) and demonstrate its functionality by imaging magnetic fields generated by electrical currents. We employ a dual-frequency sensing protocol to enhance the readout contrast and suppress noise arising from strain and temperature fluctuations. This approach enables spatial imaging of current-induced magnetic fields with a field of view of 50 × 50 virtual pixels, temporal resolution of 50ms, spatial resolution of 30μ m and sensitivity of about 2μ T Hz^-1/2 per pixel. Further sensitivity enhancement is anticipated through the use of isotopically purified SiC and improved light collection in crystallographically optimized wafer orientations. In addition, we implement a microwave-free imaging protocol based on spin level anticrossing, offering simplified operation with enhanced sensitivity. The demonstrated platform is compatible with commercial, wafer-scale fabrication and holds strong potential for applications in biomedical imaging and diagnostics, as well as non-invasive current and temperature mapping in high-power electronic devices.