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Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

Abstract

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt₂AX₃ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt₂AX₃ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt₂HgS₃/NiBr₂, Pt₂HgSe₃/CoBr₂, Pt₂HgSe₃/NiBr₂, and Pt₂ZnS₃/CoBr₂, with a maximum valley splitting of 134.2 meV in Pt₂HgSe₃/NiBr₂ and sizable global band gap of 58.8 meV in Pt₂HgS₃/NiBr₂. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.

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