Abstract
We first derive the energy dispersion of bilayer MoS₂ in the presence of a perpendicular electric field E_z. We show that the band gap and layer splitting can be controlled by the field E_z. Away from the k point, the intrinsic SOC splitting increases in the conduction band but is weakly affected in the valence band. We then analyze the band structure in the presence of a perpendicular magnetic field B and the field E_z, including spin and valley Zeeman terms, and evaluate the Hall and longitudinal conductivities. We discuss the numerical results as functions of the fields B and E_z for finite temperatures. The field B gives rise to a significant spin splitting in the conduction band, to a beating in the Shubnikov-de Haas (SdH) oscillations when it's weak, and to their splitting when it's strong. The Zeeman terms and E_z suppress the beating and change the positions of the beating nodes of the SdH oscillations at low B fields and enhance their splitting at high B fields. Similar beating patterns are observed in the spin and valley polarizations at low B fields. Interestingly, a 90% spin polarization and a 100% square-wave-shaped valley polarization are observed at high B fields. The Hall-plateau sequence depends on E_z. These findings may be pertinent to future spintronic and valleytronic devices.