Abstract
We investigate electronic transport through a graphene n-p junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the n-doped and p-doped regions are fixed to 2 and -2 respectively. We compute numerically the conductance G, the noise Q and the Fano factor F of the junction when inelastic effects are included along the interface in a phenomenological way, by means of fictitious voltage probes. Using a scaling approach, we extract the system coherence length L_φ and describe the full crossover between the coherent limit (W≪ L_φ) and the incoherent limit (W≫ L_φ), W being the interface length. While G saturates at the value e²/h in the incoherent regime, Q and F are found to vanish exponentially for large length W. Corrections due to disorder are also investigated. Our results are finally compared to available experimental data.